发明名称 |
VARICAP BASED ON METAL-DIELECTRIC-SEMICONDUCTOR SYSTEM |
摘要 |
FIELD: electrical engineering.SUBSTANCE: invention can be used for development of varicaps based on metal-dielectric-semiconductor (MDSC) system purposed for frequency and phase control of variable signal in wireless devices of HF and SHF ranges. In the varicap based on MDSC system containing semiconductor with n-type conductance, dielectric, gating electrode and sink node of minority carriers with p-n-junction the p-region of sink node of minority carriers with p-n-junction has depth equal to thickness of the semiconductor; it is made in the form of cylindrical layer and part of initial semiconductor with n-type conductance is located inside this layer and connected to the gating electrode.EFFECT: possibility to use a varicap as a capacitive switch.2 dwg |
申请公布号 |
RU2486633(C1) |
申请公布日期 |
2013.06.27 |
申请号 |
RU20120103269 |
申请日期 |
2012.02.01 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT MIKROPRIBOROV-K" |
发明人 |
SURIN JURIJ VASIL'EVICH;PETRUCHUK IVAN IVANOVICH;SPIRIDONOV ALEKSANDR BORISOVICH;VIGOVSKAJA TAT'JANA VLADIMIROVNA |
分类号 |
H01L29/92 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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