发明名称 VARICAP BASED ON METAL-DIELECTRIC-SEMICONDUCTOR SYSTEM
摘要 FIELD: electrical engineering.SUBSTANCE: invention can be used for development of varicaps based on metal-dielectric-semiconductor (MDSC) system purposed for frequency and phase control of variable signal in wireless devices of HF and SHF ranges. In the varicap based on MDSC system containing semiconductor with n-type conductance, dielectric, gating electrode and sink node of minority carriers with p-n-junction the p-region of sink node of minority carriers with p-n-junction has depth equal to thickness of the semiconductor; it is made in the form of cylindrical layer and part of initial semiconductor with n-type conductance is located inside this layer and connected to the gating electrode.EFFECT: possibility to use a varicap as a capacitive switch.2 dwg
申请公布号 RU2486633(C1) 申请公布日期 2013.06.27
申请号 RU20120103269 申请日期 2012.02.01
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT MIKROPRIBOROV-K" 发明人 SURIN JURIJ VASIL'EVICH;PETRUCHUK IVAN IVANOVICH;SPIRIDONOV ALEKSANDR BORISOVICH;VIGOVSKAJA TAT'JANA VLADIMIROVNA
分类号 H01L29/92 主分类号 H01L29/92
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