| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing the periodic table group 13 metal nitride semiconductor substrate which does not occur watermark even if a cleaning step being used without occurring growth abnormality when performing LED epitaxial growth on a substrate. <P>SOLUTION: After performing the cleaning step, a substrate and a liquid which exists on the substrate are mechanically separated (mechanical drying) to solve such problems without naturally evaporating the liquid, which exists on a surface of the substrate, i.e. the liquid is not agglutinated on the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
