发明名称 |
METHODS OF FORMING DILUTE NITRIDE MATERIALS FOR USE IN PHOTOACTIVE DEVICES AND RELATED STRUCTURES |
摘要 |
Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.
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申请公布号 |
US2013164874(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201213720524 |
申请日期 |
2012.12.19 |
申请人 |
ARENA CHANTAL;SCOTT ROBIN;CANIZARES CLAUDIO;SOITEC |
发明人 |
ARENA CHANTAL;SCOTT ROBIN;CANIZARES CLAUDIO |
分类号 |
H01L31/18;H01L21/36;H01L33/00 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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