发明名称 |
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES |
摘要 |
A three-dimensional semiconductor device may include a substrate including wiring and contact regions and a thin film structure on the wiring and contact regions of the substrate. The thin-film structure may include a plurality of alternating wiring layers and inter-layer insulating layers defining a terraced structure in the contact region so that each of the wiring layers includes a contact surface in the contact region that extends beyond others of the wiring layers more distant from the substrate. A plurality of contact structures may extend in a direction perpendicular to a surface of the substrate with each of the contact structures being electrically connected to a contact surface of a respective one of the wiring layers. Related methods are also discussed.
|
申请公布号 |
US2013161831(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201313771526 |
申请日期 |
2013.02.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SUNG-MIN;KIM HANSOO;CHO WONSEOK;JANG JAEHOON |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|