发明名称 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES
摘要 A three-dimensional semiconductor device may include a substrate including wiring and contact regions and a thin film structure on the wiring and contact regions of the substrate. The thin-film structure may include a plurality of alternating wiring layers and inter-layer insulating layers defining a terraced structure in the contact region so that each of the wiring layers includes a contact surface in the contact region that extends beyond others of the wiring layers more distant from the substrate. A plurality of contact structures may extend in a direction perpendicular to a surface of the substrate with each of the contact structures being electrically connected to a contact surface of a respective one of the wiring layers. Related methods are also discussed.
申请公布号 US2013161831(A1) 申请公布日期 2013.06.27
申请号 US201313771526 申请日期 2013.02.20
申请人 SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG SUNG-MIN;KIM HANSOO;CHO WONSEOK;JANG JAEHOON
分类号 H01L23/522 主分类号 H01L23/522
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