| 摘要 |
<p>A MOSFET (1) is provided with: a substrate (10) comprising silicon carbide, being open on one principal-surface (10A) side thereof, and having a trench (19) formed therein that has a sidewall surface (19A); a gate-insulating film (21) formed so as to be in contact with the top of the sidewall surface (19A); and a gate electrode (23) formed so as to be in contact with the top of the gate-insulating film (21). The surface roughness within a square region located on the sidewall surface (19A) and being 100nm in length on a side is 1.0nm RMS or less.</p> |
