发明名称 SUBSTRATE PROCESSING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND VAPORIZER
摘要 A substrate processing device according to the present invention comprises: a reaction chamber for processing a substrate; a vaporizer that includes a vaporizing container to which a process liquid containing hydrogen peroxide, or hydrogen peroxide and water is supplied, a process liquid supply unit for supplying a process liquid to said vaporizing container, and a heater for heating said vaporizing container; a gas supply unit for supplying the process gas generated by the vaporizer to said reaction chamber; an exhaust outlet for discharging the gas in said reaction chamber; and a control unit for controlling said heater and said process liquid supply unit such that said heater heats said vaporizing container while said process liquid supply unit supplies the process liquid to said vaporizing container.
申请公布号 WO2013094680(A1) 申请公布日期 2013.06.27
申请号 WO2012JP83047 申请日期 2012.12.20
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 ASHIHARA, HIROSHI;SAKUMA, HARUNOBU;TATENO, HIDETO;WADA, YUICHI
分类号 H01L21/31;C23C16/448;H01L21/316 主分类号 H01L21/31
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