FABRICATING METHOD OF WAFER

摘要

PURPOSE: A method of manufacturing wafer is provided to effectively control impurity by preventing diffusion of impurity existing in a wafer to a wafer before thermal processing. CONSTITUTION: A wafer is cleaned(S110). The wafer is loaded to a thermal processing apparatus(S120). The wafer is first thermal processed at first temperature(S130). The wafer is etched(S140). The wafer is second thermal processed at second temperature(S150). [Reference numerals] (AA) Start; (BB) Finish; (S110) Wafer is cleaned; (S120) Thermal processing apparatus; (S130) Wafer is first processed at first temperature; (S140) Wafer is etched; (S150) Wafer is second thermal processed at second temperature