SELECTIVE LASER ANNEALING PROCESS FOR BURIED REGIONS IN A MOS DEVICE

摘要

Laser anneal to melt regions of a microelectronic device buried under overlying materials, such as an interlayer dielectric (ILD). Melting temperature differentiation is employed to selectively melt a buried region. In embodiments a buried region is at least one of a gate electrode and a source/drain region. Laser anneal may be performed after contact formation with contact metal coupling energy into the buried layer for the anneal.