发明名称 |
Silicon Oxynitride Film Formation Method and Substrate Equipped with Silicon Oxynitride Film Formed Thereby |
摘要 |
The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
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申请公布号 |
US2013164690(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113704532 |
申请日期 |
2011.08.10 |
申请人 |
SHINDE NINAD;NAGAHARA TATSURO;TAKANO YUSUKE;AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
SHINDE NINAD;NAGAHARA TATSURO;TAKANO YUSUKE |
分类号 |
B05D3/06 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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