SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A semiconductor device may include a gate structure on a substrate, the gate structure including a first metal; an insulating interlayer covering the gate structure on the substrate; a resistance pattern in the insulating interlayer, the resistance pattern having a top surface lower than a top surface of the insulating interlayer and including a second metal different from the first metal at least at an upper portion thereof; and/or a first contact plug through a first portion of the insulating interlayer, the first contact plug making direct contact with the upper portion of the resistance pattern.