METHOD FOR MANUFACTURING SILICON OXIDE NANO WIRES

摘要

PURPOSE: A manufacturing method of a silicon oxide nanowire is provided to prevent the need of injection of a separate silicon source by coating a metal nanoparticle with a silicon wafer, and heat-treating in the reaction gas atmosphere including hydrogen gas. CONSTITUTION: A manufacturing method of a silicon oxide nanowire comprises the following steps: a metal nanoparticle is coated with a silicon wafer(S120); and heat-treating is conducted in the reaction gas atmosphere including hydrogen gas(S140). The metal nanoparticle is nickel nanoparticle. The heat processing step is performed in the reaction gas atmosphere which includes nitrogen. The hydrogen gas is included based on the standard atmospheric condition to 1-99% range of the total volume of the reaction gas. [Reference numerals] (AA) Start; (BB) End; (S110) Washing silicon wafer; (S120) Metal nanoparticle coating; (S130) Input reaction gas together into a reaction furnace and sealing; (S140) Heat treatment