| 摘要 |
It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 50 at.% and the noble metal at a ratio of equal to or greater than 5 at.% and equal to or less than 50 at.%. The noble metal is preferably one or more kinds of metals selected from the group consisting of ruthenium, rhodium, and iridium. |
