发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits an occurrence of voids at an interface between a semiconductor element and an underfill sheet thereby to enable manufacturing of a highly reliable semiconductor device. <P>SOLUTION: A manufacturing method of a semiconductor device including an attached body, a semiconductor element electrically connected to the attached body and an underfill material with which a space between the attached body and the semiconductor element is filled, comprises: a preparation step of preparing an encapsulation sheet including a supporting material and an underfill material laminated on the supporting material; a thermalcompression bonding step of thermalcompression bonding a circuit surface on which a connection member of a semiconductor wafer is formed and the underfill material of the encapsulation sheet under reduced pressure of not exceeding 10000 Pa, and under conditions of a pressing force of 0.2 MPa and over and a thermalcompression bonding temperature of 40&deg;C and over; a dicing step of dicing the semiconductor wafer to form semiconductor elements with the underfill materials; and a connection step of electrically connecting the semiconductor element and the attached body via the connection member while filling a space between the attached body and the semiconductor element with the underfill material. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013127999(A) 申请公布日期 2013.06.27
申请号 JP20110276003 申请日期 2011.12.16
申请人 NITTO DENKO CORP 发明人 MORITA KOSUKE;TAKAMOTO HISAHIDE;CHITOSE HIROYUKI
分类号 H01L21/60 主分类号 H01L21/60
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