DEVELOPING SOLUTION FOR RESIST AND DEVELOPING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a developing solution for resist, with which a developing process and an etching process can be simultaneously carried out without separating a resist developing process from an etching process on a tungsten oxide.

SOLUTION: A developing solution for a resist including tetramethylammonium hydroxide, a persulfate and water is used for developing a resist.

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