| 摘要 |
<p>The invention relates to growing and processing monocrystals. Silicon carbide produced by the method of the present invention can be used not only for the electronic industry and jewelry-making but also as glass for watches or watchcase. The method comprises simultaneously growing a plurality of moissanite crystal blanks in a honeycomb mold of molding graphite, separating the blanks into individual crystals, faceting, grinding and polishing the crystals. Prior to faceting, the blanks are glued onto a mandrel with their one side and then-with the reverse side thereof. Polishing is carried out on a ceramic wheel rotating at a rate of 200 to 300 rpm using diamond powder spray with a grain size of 0.125-0.45 µm to ensure that the depth of scratch marks be less than the length of a light wave in the visible part of the spectrum, and the cut and cleaved edges and defective blanks unsuitable for faceting are pulverized and returned to the stage of growing.</p> |
