| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which enables a tungsten film to be successfully buried in a via hole via a barrier layer and which can reduce in-plane variation of contact resistance between copper wiring and a plug in a semiconductor substrate to obtain favorable contact resistance. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a via hole 18 in an interlayer insulation layer 17 covering copper wiring 15 on a semiconductor substrate 11; subsequently, forming a titanium film 21 on a bottom face 18a of the via hole 18 and on a top face 17a of the interlayer insulation layer 17 in a sputter chamber having strong directivity; subsequently, forming a first titanium nitride film on the titanium film 21 in the sputter chamber having strong directivity; subsequently, forming a second titanium nitride film 24 on the first titanium nitride film 22 in the sputter chamber having strong directivity; and subsequently, forming a tungsten film 27 to be buried in the via hole 18. <P>COPYRIGHT: (C)2013,JPO&INPIT |
