发明名称 CARRIER MOBILITY IN SURFACE-CHANNEL TRANSISTORS, APPARATUS MADE THEREWITH, AND SYSTEM CONTAINING SAME
摘要 A surface channel transistor is provided in a semiconductive device. The surface channel transistor is either a PMOS or an NMOS device. Epitaxial layers are disposed above the surface channel transistor to cause an increased bandgap phenomenon nearer the surface of the device. A process of forming the surface channel transistor includes grading the epitaxial layers.
申请公布号 US2013164898(A1) 申请公布日期 2013.06.27
申请号 US201313773558 申请日期 2013.02.21
申请人 PILLARISETTY RAVI;HUDAIT MANTU;RADOSAVLJEVIC MARKO;DEWEY GILBERT;KAVELIEROS JACK T. 发明人 PILLARISETTY RAVI;HUDAIT MANTU;RADOSAVLJEVIC MARKO;DEWEY GILBERT;KAVELIEROS JACK T.
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
主权项
地址