发明名称 |
RINSE SOLUTION FOR LITHOGRAPHY AND PATTERN FORMATION METHOD EMPLOYING THE SAME |
摘要 |
The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve prevention of both the pattern collapse and the melting at the same time. The solution contains water and a particular nitrogen-containing compound having an organic group, such as, alkyl amine or the like. The rinse solution may further contain a nonionic surfactant, if necessary.
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申请公布号 |
US2013164694(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113812737 |
申请日期 |
2011.08.09 |
申请人 |
WANG XIAOWEI;MATSUURA YURIKO;PAWLOWSKI GEORG;AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
WANG XIAOWEI;MATSUURA YURIKO;PAWLOWSKI GEORG |
分类号 |
G03F7/40;G03F7/20 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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