摘要 |
A semiconductor structure having: a column IV material or column IV-IV material; a nucleation layer of AlN layer or a column HI nitride having more than 60% aluminum content on a surface of the column IV material or column INT-IV material and a layer of column III-V material over the nucleation layer, where the nucleation layer and the layer of column III-V material over the nucleation layer have different crystallographic structures. In one embodiment, the columnffl V nucleation layer is a nitride and the column III-V material of the over the nucleation layer is a non-nitride such as, for example, an arsenide (e.g., GaAs), a phosphide (e.g, InP) or an antimonide (e.g. InSb), or alloys thereof.
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