发明名称 |
METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET |
摘要 |
A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region. |
申请公布号 |
US2013161635(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113335572 |
申请日期 |
2011.12.22 |
申请人 |
BROWN RICHARD J.;KIZILYALLI ISIK C.;NIE HUI;EDWARDS ANDREW P.;BOUR DAVID P.;EPOWERSOFT, INC. |
发明人 |
BROWN RICHARD J.;KIZILYALLI ISIK C.;NIE HUI;EDWARDS ANDREW P.;BOUR DAVID P. |
分类号 |
H01L29/78;H01L21/338 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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