| 摘要 |
<p>Disclosed are a method for manufacturing a sputtering target using a cold spray which can uniformly add an Na component into a Cu-Ga layer and a cold spray device for performing the same. The method for manufacturing the sputtering target using the cold spray according to the present invention comprises the steps of: arranging a backing plate formed of a metal or a basic material in front of the cold spray device; supplying the mixed powders consisting of Cu-Ga powder alloyed with compositions of Cu:Ga of 7:3 to 8:2 wt% and 0.01 to 0.05 wt% of Na2S powder based on the Cu-Ga powder, to a mixing chamber within the cold spray device; and supplying a working gas to the mixing chamber and applying the mixed powders sprayed at high speed together with the working gas, to the surface of the backing plate or the basic material. In addition, the cold spray device of the present invention includes a spray nozzle for moving the mixture containing the high-temperature working gas flowing in from the outside and the solid powder at a supersonic speed through the cavity formed at the inside thereof, so as to spray the mixture to the surface of the basic material, and further includes a cooling member which is formed to cover the outside of the spray nozzle, and cools the spray nozzle through a refrigerant so as not to fuse or fix the solid powder at the inner cavity of the spray nozzle.</p> |
