| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern formation method useful for forming a fine pattern, and a resist composition used therefor. <P>SOLUTION: A resist pattern formation method includes the steps of: forming, on a support medium 1, a resist film 2 having an association structure of an acidic group and a cation having light-absorbing properties; exposing the resist film 2 to light and destructing the association structure for exposure of the acidic group; and developing the resist film 2 with developer containing an organic solvent. There is also provided a resist composition used therefor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
