发明名称 MOLD FOR NANOIMPRINT LITHOGRAPHY
摘要 The present invention relates to a method for manufacturing a nanoimprint lithography mold. The method comprises an initial step of depositing, on a mechanical support, a layer of a phase-changing material having a volume variation of at least 2% between a crystalline phase and an amorphous phase. The method is characterized in that it also comprises a step of personalization of the mold, achieved by making the layer of phase-changing material transition locally from its crystalline phase to its amorphous phase in order to form relief patterns therein. The invention comprises such a mold as well as a method for modifying such a mold.
申请公布号 US2013164442(A1) 申请公布日期 2013.06.27
申请号 US201213712211 申请日期 2012.12.12
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 LANDIS STEPHAN;HYOT BERANGERE
分类号 B29C59/02 主分类号 B29C59/02
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