PROCESSES AND SYSTEMS FOR REDUCING UNDESIRED DEPOSITS WITHIN A REACTION CHAMBER ASSOCIATED WITH A SEMICONDUCTOR DEPOSITION SYSTEM

摘要

Processes and systems are used to reduce undesired deposits within a reaction chamber associated with a semiconductor deposition system. A cleaning gas may be caused to flow through at least one gas flow path extending through at least one gas furnace, and the heated cleaning gas may be introduced into a reaction chamber to remove at least a portion of undesired deposits from within the reaction chamber.