| 摘要 |
This invention provides an electroluminescence device comprising an indirect bandgap semiconductor layer, such as silicon or germanium, having a local conduction-band minimum at the Gamma-point in an E-k diagram for using as a light emitting layer, and a direct bandgap semiconductor layer formed by a heterojunction on the indirect bandgap semiconductor layer for using as an electron supply means transporting electrons from a Gamma-valley to a Gamma-valley when a forward-biased voltage is applied, wherein a light emission is occurred by recombining the electrons transported to the Gamma-valley of the indirect bandgap semiconductor layer with holes located at a valance band maximum of the indirect bandgap semiconductor layer.
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