| 发明名称 |
LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER |
| 摘要 |
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density from about 500 cm-2 to about 2000 cm-2.
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| 申请公布号 |
US2013161651(A1) |
申请公布日期 |
2013.06.27 |
| 申请号 |
US201313776784 |
申请日期 |
2013.02.26 |
| 申请人 |
CREE, INC.;CREE, INC. |
发明人 |
POWELL ADRIAN;BRADY MARK;MUELLER STEPHAN G.;TSVETKOV VALERI F.;LEONARD ROBERT T. |
| 分类号 |
H01L29/16 |
主分类号 |
H01L29/16 |
| 代理机构 |
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