发明名称 MONOMER, POLYMER, AND PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide monomers, polymers, and photoresist compositions which allow for application in forming photolithography pattern by negative tone development; and to provide a coated base material. <P>SOLUTION: This invention relates to: monomers of the following general formula (I); and polymers containing a polymerization unit of the monomers, wherein R<SB POS="POST">1</SB>is hydrogen or methyl. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013127052(A) 申请公布日期 2013.06.27
申请号 JP20120243367 申请日期 2012.11.05
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 SUN JIBIN;BAE YOUNG CHEOL;PARK JONG KEUN;LEE SEUNG HYUN;ANDES CECILY
分类号 C08F20/28;C07C69/54;G03F7/038;G03F7/039 主分类号 C08F20/28
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