| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a slew rate of a signal transmitted between a semiconductor element having small load capacity and a semiconductor element having large load capacity. <P>SOLUTION: In a semiconductor device of a present embodiment, when a signal is transmitted to a semiconductor element (e.g., memory element 200) having large load capacity, pre-emphasis is performed, and when a signal is transmitted to a semiconductor element (e.g., memory controller 100) having small load capacity, pre-emphasis is not performed or performed a little. By doing this, when the signal is transmitted to the memory element, waveform rounding at a signal rise caused by load capacity is inhibited, and when the signal is transmitted to the memory controller, ringing caused by signal reflection is inhibited. Accordingly, a slew rate of data transmission is improved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
