发明名称 |
METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE AND GATE |
摘要 |
A semiconductor device includes a III-nitride substrate, a first III-nitride epitaxial layer coupled to the III-nitride substrate and having a mesa, and a second III-nitride epitaxial layer coupled to a top surface of the mesa. The semiconductor device further includes a III-nitride gate structure coupled to a side surface of the mesa, and a spacer configured to provide electrical insulation between the second III-nitride epitaxial layer and the III-nitride gate structure.
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申请公布号 |
US2013161705(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201113334514 |
申请日期 |
2011.12.22 |
申请人 |
DISNEY DON;KIZILYALLI ISIK C.;NE HUI;ROMANO LINDA;BROWN RICHARD J.;RAJ MADHAN;EPOWERSOFT, INC. |
发明人 |
DISNEY DON;KIZILYALLI ISIK C.;NE HUI;ROMANO LINDA;BROWN RICHARD J.;RAJ MADHAN |
分类号 |
H01L29/808;H01L21/337 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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