Lateral transistor component e.g. MOSFET, has dielectric layer comprising transition region in which thickness increases toward another thickness and inclined at specific angle, and body region arranged between source and drift regions

摘要

The component has a source region (11) and a drain region (12) spaced in lateral direction of a semiconductor body (100). A body region (13) is arranged between the source region and a drift region (14). A gate and field electrode (20) is arranged above an active transistor field (110) and insulated in relation to the semiconductor body by a dielectric layer (30). The dielectric layer comprises a transition region (33) in which the thickness increases toward another thickness, and is inclined at an angle smaller than 90 degrees with respect to a side (101) of the semiconductor body. An independent claim is also included for a method for manufacturing a dielectric layer.