| 摘要 |
A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and a metal film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the metal film is oxidized to form a metal oxide film. Further, resistivity of the metal oxide film is greater than or equal to 1×1010 Omegam and less than or equal to 1×1019 Omegam.
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