发明名称 |
PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF |
摘要 |
The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
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申请公布号 |
US2013164680(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201313774625 |
申请日期 |
2013.02.22 |
申请人 |
MACHINES CORPORATION INTERNATIONAL BUSINESS;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN KUANG-JUNG;LIU SEN;HUANG WU-SONG;LI WAI-KIN |
分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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