| 摘要 |
A semiconductor device includes a carrier transit layer above a substrate, a carrier supply layer above the carrier transit layer, an etching stopper layer above the carrier supply layer, the etching stopper layer being coupled to a gate electrode, and a cap layer above the etching stopper layer, the cap layer being coupled to each of a source electrode and a drain electrode and having a conduction band energy lower than that of the etching stopper layer, wherein a portion of the etching stopper layer on the cap layer includes Silicon. |
