| 摘要 |
PURPOSE: An epitaxial substrate and a method of fabricating the same are provided to include a pattern on an epitaxial layer, thereby preventing misfit dislocations in the epitaxial layer, which is caused by the difference between a dopant and the epitaxial layer in a lattice constant and thermal expansion coefficient. CONSTITUTION: An epitaxial substrate comprises a base substrate(100) and an epitaxial layer(200). The epitaxial layer is disposed on the base layer and formed by an epitaxial growth. The epitaxial layer includes a pattern(300) which exposes the top surface of the base substrate. The base substrate and the epitaxial layer include silicon carbide.
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