| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching composition containing a silyl phosphate compound, a phosphoric acid and deionized water, and to provide a method for manufacturing a semiconductor element including an etching step using the same. <P>SOLUTION: The etching composition has characteristics of a high etching selection ratio of a nitride film with respect to an oxide film, and accordingly minimizes etching of the oxide film and can easily adjust an EFH. When the etching composition is used, a damage of the quality of the oxide film and deterioration of electrical characteristics caused by the etching of the oxide film are prevented when the nitride film if removed, the generation of particles is prevented, stability of steps is secured, and element characteristics can be enhanced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
