NON-VOLATILE STORAGE DEVICE AND MANUFACTURING METHOD THEREOF

摘要

This non-volatile storage device is equipped with a memory cell array (10) that has multiple memory cells (11), each of said memory cells comprising a variable resistance component (141) and a first current control component (142) The device is also equipped with a current control component parameter generation circuit (20) that has: third wiring (203) which is provided between a substrate (100) and a second interlayer insulation layer (105); fourth wiring (219) which is provided above the second interlayer insulation layer (105); and second current control components (242) each of which is connected to the third wiring (203) and the fourth wiring (219) without being intervened by the variable resistance component (141) by removing the variable resistance component (141) from between the third wiring (203) and the fourth wiring (219), and exhibits the same nonlinear current control characteristic as that of the first current control component (142).