发明名称 |
Preparing beta-silicon carbide useful e.g. as substrate for catalyst, high technology ceramics, and as semiconductors, comprises providing plant material, and thermally reacting plant material in absence of oxygen at specific temperature |
摘要 |
<p>Preparing beta -silicon carbide, comprises (a) providing plant material, and (b) thermally reacting the plant material in the absence of oxygen at a temperature of 1200-less than 1450[deg] C. An independent claim is also included for the beta -silicon carbide exhibiting a specific surface area of at least 350 m 2>/g, preferably at least 450 m 2>/g.</p> |
申请公布号 |
DE102011056122(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
DE20111056122 |
申请日期 |
2011.12.07 |
申请人 |
UNIVERSITAET POTSDAM |
发明人 |
NOESKE, ROBERT;NEUMANN, MIKE;STRAUCH, PETER |
分类号 |
C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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