| 摘要 |
A thin film transistor substrate is provided to prevent a current characteristic in an active layer from being changed into a nonlinear type by preventing light from being incident on the active layer through a shield pattern, thereby improving the quality of liquid crystal display. A thin film transistor substrate includes a gate pattern, a data line(104), a shield pattern(100), a semiconductor pattern, a source electrode(110), a drain electrode(112) and a pixel electrode(118). The gate pattern includes a gate line(102) formed on a substrate and a gate electrode(108) extended from the gate line. The data line is intersected to the gate line with a gate insulation layer between them, and defines a pixel area. The shield pattern is formed on the gate insulation layer to shield light. The semiconductor pattern is formed directly on the shield pattern and formed in the same pattern as the shield pattern, and includes an active layer(114) and an ohmic contact layer. The source electrode is in contact with the data line and is formed on the semiconductor pattern. The drain electrode is formed on the semiconductor pattern, and is adapted opposite to the source electrode with a channel unit between the drain electrode and the source electrode, wherein the channel unit exposes the active layer. The pixel electrode is coupled to the drain electrode and includes a pixel electrode formed in the pixel area. |
