| 摘要 |
PURPOSE: A polycrystalline silicon manufacturing apparatus and a manufacturing method thereof are provided to suppress production of a silicon powder by allowing reaction gas sprayed to the outside of a jacket to flow into the inside of the jacket following downward and upward drift. CONSTITUTION: A polycrystalline silicon manufacturing apparatus comprises at least one silicon filament(28), a jacket(13), at least one carrier gas nozzle(8), and at least one reaction nozzle (14,24). The silicon filament is heated to a deposition temperature by a current from the outside, and polysilicon is deposited on the surface of the silicon filament. The jacket is arranged along a longitudinal direction of a silicon filament to surround the silicon filament. The carrier gas nozzle supplies carrier gas into the jacket. The reaction gas nozzle supplies the reaction gas to the outside of the jacket. The carrier gas nozzle sprays the carrier gas toward an upper part of the jacket. The reaction gas nozzle sprays the reaction gas downward in an inclined state. |
