| 摘要 |
<p>There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.</p> |
