CMOS DEVICE FOR REDUCING CHARGE SHARING EFFECT AND PREPARATION METHOD THEREFOR

摘要

Provided are a CMOS device for reducing the charge sharing effect and a preparation method therefor. The CMOS device includes a substrate (1), an isolation area (4), an active area (5), a gate area (6), an LDD area (7), a gate sidewall (8), a source and drain area (9) and an additional isolation area (3) for capturing carriers provided immediately beneath the isolation area (4). The material of the additional isolation area is porous silicon. The CMOS device can reduce the charge sharing effect caused by heavy ions and can improve the anti-irradiation performance of the integrated circuit with a simple manufacturing process.