发明名称 |
CONTACT STRUCTURES FOR SEMICONDUCTOR TRANSISTORS |
摘要 |
<p>Embodiments of the present invention provide a contact structure for transistor. The contact structure includes a first epitaxial-grown region between a first and a second gate of, respectively, a first and a second transistor; a second epitaxial-grown region directly on top of the first epitaxial-grown region with the second epitaxial-grown region having a width that is wider than that of the first epitaxial-grown region; and a silicide region formed on a top portion of the second epitaxial-grown region with the silicide region having an interface, with rest of the second epitaxial-grown region, that is wider than that of the first epitaxial-grown region. In one embodiment, the second epitaxial-grown region is at a level above a top surface of the first and second gates of the first and second transistors.</p> |
申请公布号 |
WO2013095750(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
WO2012US58514 |
申请日期 |
2012.10.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;ALPTEKIN, EMRE;VEGA, REINALDO A. |
发明人 |
ALPTEKIN, EMRE;VEGA, REINALDO A. |
分类号 |
H01L21/8238;H01L21/28;H01L21/336;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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