| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to form a conductive layer on a side of the channel length direction of a gate electrode layer, thereby suppressing the light from penetrating an oxide semiconductor layer. CONSTITUTION: A source electrode layer(405a) and a drain electrode layer(405b) are formed on an insulating surface. An oxide semiconductor layer(403) is formed between the source electrode layer and the drain electrode layer. A gate insulating layer(402) which contacts with an upper side of the source electrode layer, the electrode layer, and the oxide semiconductor layer are formed. A gate electrode layer(401) is formed in an area that overlaps with the oxide semiconductor layer. A pair of impurity regions(403a,403b) and a channel forming region(403c) are formed on the oxide semiconductor layer.</p> |
