SEMICONDUCTOR MEMORY APPARATUS

摘要

PURPOSE: A semiconductor memory device is provided to improve the low voltage properties of a bit line sense amplifier by controlling a sense amplifier with a low threshold voltage. CONSTITUTION: A first sense amplifier(10) is driven by a power driving signal and a ground driving signal and includes a first inverter and a second inverter connected between a bit line and a bit bar line in a latch structure. A second sense amplifier(200) is driven by the ground driving signal and includes a first transistor and a second transistor connected between the bit line and the bit bar line in the latch structure when an activated switching signal is applied. The threshold voltage of the second sense amplifier is set lower than the threshold voltage of the first sense amplifier. [Reference numerals] (300) Control unit