Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method

摘要

A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba 1-x Sr x Ti y O 3 , wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002 < B/A< 0.05, and the molar ratio C/A of the composite oxide C to the composite metal oxide A is within the range of 0.002 < C/A < 0.03.