METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to increase the reliability of a patterning process for forming MTJ elements by stably forming a film arranged on the upper part of a metal film for a lower electrode. CONSTITUTION: A metal film(32a) for a lower electrode is formed on a substrate. The lower electrode metal film is formed with a predetermined first thickness through a chemical and mechanical polishing process. The lower electrode metal film is formed with a predetermined second thickness through a wet-etching process. A plurality of layers(33) for the MTJ element are formed on the lower electrode metal film. The MTJ element and the lower electrode are formed by etching the plurality of layers for the MTJ element and the lower electrode metal film.