发明名称 SI AND SIN WAVEGUIDE RING RESONATOR STRUCTURE
摘要 PURPOSE: A structure of a ring resonator having silicon and a silicon nitride film waveguide is provided to form a space between linear waveguides and ring waveguides and a space between the ring waveguides with over 300nm, thereby simplifying manufacturing processes using a simple lithographic process. CONSTITUTION: A ring resonator(100) includes first and second waveguides(110,120) and a channel part. The first and the second waveguides are mutually separated on a substrate. The channel part includes ring waveguides(150) aligned in a row between the first and the second waveguides. The first and the second waveguides and the ring waveguides are formed with silicon. The width of the ring waveguide is 0.7 to 1.5 micrometers, and the height of the ring waveguide is 150 to 300nm. A distance between the first and the second waveguides and the ring waveguide closest to the first and the second waveguides is 250nm to 1mm.
申请公布号 KR20130069143(A) 申请公布日期 2013.06.26
申请号 KR20110136714 申请日期 2011.12.16
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 PARK, SAHNG GI;KIM, KAP JOONG;KIM, IN GYOO;KIM, GYUNG OCK
分类号 H01P7/08 主分类号 H01P7/08
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