发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent damage to a pillar pattern in an etching back process by forming a protective film between the pillar patterns. CONSTITUTION: A pillar pattern(140) is formed on a semiconductor substrate(100) in zigzag. A first hole is formed between the pillar patterns. A protective film(180) is formed on the sidewall of the first hole. A second hole is formed by etching a part of the first hole. A bit line(190) is formed on the second hole. An OSC(One Side Contact)(200) is formed by implanting ions into the pillar pattern.</p> |
申请公布号 |
KR20130068697(A) |
申请公布日期 |
2013.06.26 |
申请号 |
KR20110136022 |
申请日期 |
2011.12.16 |
申请人 |
SK HYNIX INC. |
发明人 |
LEE, BYOUNG HOON;LIM, CHANG MOON |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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