发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent damage to a pillar pattern in an etching back process by forming a protective film between the pillar patterns. CONSTITUTION: A pillar pattern(140) is formed on a semiconductor substrate(100) in zigzag. A first hole is formed between the pillar patterns. A protective film(180) is formed on the sidewall of the first hole. A second hole is formed by etching a part of the first hole. A bit line(190) is formed on the second hole. An OSC(One Side Contact)(200) is formed by implanting ions into the pillar pattern.</p>
申请公布号 KR20130068697(A) 申请公布日期 2013.06.26
申请号 KR20110136022 申请日期 2011.12.16
申请人 SK HYNIX INC. 发明人 LEE, BYOUNG HOON;LIM, CHANG MOON
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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