METHOD FOR PRODUCING THICK FILM PHOTORESIST PATTERN

摘要

PURPOSE: A manufacturing method of thick film photoresist pattern is provided to increase wettability of substrate and to suppress sudden evaporation in prebake of thick film photoresist layer by containing specific organic solvent among chemical amplification positive type photoresist composition for thick film. CONSTITUTION: A manufacturing method of thick film photoresist pattern comprises the following steps. (a) A thick film photoresist layer comprised of chemical amplification positive type photoresist composition for thick film is laminated on the support. (b) An active ray or radiation is irradiated on the thick film photoresist layer. And (c) The thick film photoresist layer is developed after exposure and the thick film photoresist pattern is obtained. The chemical amplification positive type photoresist composition for thick film comprises an acid generator (a), a resin (B), and an organic solvent (S). The acid generator (A) generates acid by irradiation of active ray or radiation. The resin (B) increases solubility about alkali with acid reaction. The organic solvent (S) contains 40 mass% or more of specific organic solvent among the total organic solvent. The specific organic solvent has the boiling point of 150 degree Celsius or more at atmospheric pressure and the adhering angle 18 degree or smaller according to the silicon substrate.