发明名称 MANUFACTURING EQUIPMENT FOR EPITAXIAL WAFER
摘要 PURPOSE: A manufacturing device for an epitaxial wafer is provided to effectively prevent abnormal deposition by forming a deposition prevention unit using carrier gas supplied for preventing the overheating of a temperature sensor. CONSTITUTION: A rotary plate(110) has a mounting groove(111) mounting a wafer(100) formed on the upper side thereof. A support(120) and a rotary shaft(130) rotate the rotary plate. A deposition prevention unit blows carrier gas into a space between the mounting groove and the circumference of the wafer. The deposition prevention unit has a carrier gas supply unit(150) supplying the carrier gas and a fluid path. The fluid path leads the carrier gas supplied from the carrier gas supply unit to a bevel(101) and a lower side(102) of the wafer.
申请公布号 KR20130068783(A) 申请公布日期 2013.06.26
申请号 KR20110136150 申请日期 2011.12.16
申请人 LG SILTRON INCORPORATED 发明人 SHIM, JUNG JIN
分类号 H01L21/20;H01L21/02 主分类号 H01L21/20
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